Publications of Jeongnim Kim

"Molecular hydrogen adsorbed on benzene: insights from a quantum Monte Carlo study," Todd D. Beaudet, Michele Casula, Jeongnim Kim, Sandro Sorella, Richard M. Martin, J. Chem. Phys. 129, 164711 (2008).
"Electronic structures and superconductivity of endohedrally doped C28 solids from first principles" , N. A. Romero, J. Kim and R. M. Martin, Phys. Rev. B 76, 205405 (2007).
"Quantum Monte Carlo calculations of the optical gaps of Ge nanoclusters using core-polarization potentials," J. E. Vincent, J. Kim and R. M. Martin, Phys. Rev. B 75, 045302 (2007).
``Effects of morphology on phonons in nanoscopic silver grains,'' G. A. Narvaez, J. Kim and J. W. Wilkins, Phys. Rev. B 72, 155411 (2005).
``Complexity of small silicon self-interstitial defects'', D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, Phys. Rev. Lett. 92, 045501 (2004).
``Electron-phonon interactions in C₂₈-derived molecular solids,'' N. A. Romero, J. Kim and R. M. Martin, Phys. Rev. B 70, 140504 (2004).
``Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding,'' S. Lee, J. Kim, L. Jonsson, J. W. Wilkins, G. W. Bryant, and G. Klimeck, Phys. Rev. B 66, 235307 (2002).
``Thermodynamic processes of Si-interstitial clusters,'' J. Kim, S. Birner, D. A. Richie, John W. Wilkins and A. F. Voter, in International Conference on Computational Nanoscience Proceedings, 117 (2001).
``Highly optimized empirical potential model of silicon,'' T. J. Lenosky, B. Sadigh, E. Alonso, V. V. Bulatov, T. D. de la Rubia, J. Kim, A. F. Voter, and J. D. Kress, Modeling Simul. Mater. Sci. Eng. 8, 825 (2000).
``Stability of Si-interstitial defects: from point to extended defects,'' J. Kim, F. Kirchhoff, J. W. Wilkins, and F. S. Khan, Phys. Rev. Lett. 84, 503 (2000).
``Thermally activated reodientation of di-interstitial defects in silicon'', J. Kim, F. Kirchhoff, W. G. Aulbur, J. W. Wilkins, F. S. Khan and G. Kresse, Phys. Rev. Lett. 83, 1990 (1999).
``Electronic structures of [110] faceted ``self-assembled'' pyramidal InAs/GaAs quantum dots'', L. W. Wang, J. Kim and A. Zunger, Phys. Rev. B 59, 5678 (1999).
``Assembling small fullerenes: a molecular dynamics study,'' G. Galli, A. Canning and J. Kim, to appear in 'Covalently bonded disorder thin-film materials', Eds. M. P. Siegal, J. E. Jaskie, W. Milne and D. McKenzie (1998).
``Large scale quantum simulations using Tight-Binding Hamiltonians and linear scaling methods'', G. Galli, J. Kim, A. Canning and R. Haerle, 'Tight-Binding Approach to Computational Materials Science', Eds. P. Turchi, A. Gonis and L. Colombo, 425 (1998).
``Comparison of the electronic structure of InAs/GaAs pyramidal quantum dots with different facet orientation'', J. Kim, L. W. Wang and A. Zunger, Phys. Rev. B 57, R9408 (1998).
``Comparison of two methods for describing the strain profiles in quantum dots'', C. Pryor, J. Kim, L. W. Wang, A. J. Williamson, and A. Zunger, J. App. Phys. 83, 2548 (1998).
``Disordered and ordered C₂₈ solids'', J.~Kim, G.~Galli, J. W. Wilkins, and A. Canning, J. of Chem. Phys. 108, 2631 (1998).
``Prediction of charge separation in GaAs/AlAs ``Russian Doll'' nanostructures,'' J. Kim, L. W. Wang, and A. Zunger, Phys. Rev. B 56, R15541 (1997).
``Extended Si {311} defects,'' J. Kim, J. Wilkins, F. Khan, and A. Canning, Phys. Rev. B, 55, 16186 (1997).
``Carbon superatom thin films,'' A. Canning, G. Galli, and J. Kim, Phys. Rev. Lett. 78, 4442 (1997).
``Total energy global optimization using nonorthogonal localized orbitals,'' J. Kim, F. Mauri, and G. Galli, Phys. Rev. B 52, 1640 (1995).
``Surface phonons of the Si(111)-7x7 reconstructed surface,'' J. Kim, M.-L. Yeh, F. S. Khan, and J. W. Wilkins, Phys. Rev. B 52, 14709 (1995).
``Parallel decomposition of the tight-binding fictitious Lagrangian algorithm for molecular dynamics simulations of semiconductors,'' M.-L. Yeh, J. Kim, and F. S. Khan, Comp. in Phys. 9, 108 (1995).